Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon structure (NPT-Non punch through-IGBT)
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (12 mm) and creepage distances (20 mm)

Typical Applications
• Switching (not for linear use)
• Inverter drives
• UPS

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