Features
· MOS input (voltage controlled)
· N channel, Homogeneous Si
· Low inductance case
· Very low tail current with low temperature dependence
· High short circuit capability, self limiting to 6 * Icnom
· Latch-up free
· Fast & soft inverse CAL diodes8)
· Isolated copper baseplate using DCB Direct Copper Bonding Technology
· Large clearance (10 mm) and creepage distances (20 mm).

Typical Applications: ® B 6 – 85
· Three phase inverter drives
· Switching (not for linear use)

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