Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)
• Low inductance case
• Low tail current with low temperature dependence
• High short circuit capability, self limiting to 4 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding
• Large clearance (13 mm) and creepage distances (20 mm)

Typical Applications
• AC inverter drives on mains 575 – 750 VAC
• DC bus voltage 750 – 1200 VDC
• Public transport (auxiliary syst.)
• Switching (not for linear use)

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