Features
• N channel, Homogeneous Silicon structure (NPT-IGBT)
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding
• Large clearance (12 mm) and creepage distances (20 mm).

Typical Applications
• Switching, not for linear use
• AC-inverter drives
• Regen. Drives

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