Features
• N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)
• Low tail current with low temperature dependence
• High short circuit capability, self limiting if term. G is clamped to E
• Pos. temp.-coeff. of VCEsat
• 50 % less turn off losses 9)
• 30 % less short circuit current 9)
• Very low Cies, Coes, Cres 9)
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without  hard mould
• Large clearance (13 mm) and creepage distances (20 mm)

Typical Applications
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter servo drives
• UPS uninterruptable power supplies
• Welding inverters

Descargar Ficha Técnica