Features
• N channel, Homogeneous Silicon structure (NPT-IGBT)
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding
• Large clearance (13 mm) and creepage distances (20 mm).

Typical Applications
• Bidirectional switches as “reverse blocking” IGBT
• Regenerative braking
• Quasi resonant inverters
• DC bus voltage 750 – 1200 VDC
• Public transport (auxiliary syst.)
• Switching (not for linear use)

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