Features
• N channel, epitaxial Silicon structure (PT- Punch-through IGBT)
• High short circuit capability, self limiting, if term. G is clamped to E
• Latch-up free, if clamped as above
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (10 mm) and creepage distances (20 mm)

Typical Applications ® B6 – 43
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter drives
• UPS uninterruptable power supplies