Features
• N channel, Homogeneous Silicon structure (NPT-IGBT)
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding
• Large clearance (10 mm) and creepage distances (20 mm).

Typical Applications
• Switching (not for linear use)
• Bidirectional switches
• Regenerative Braking
• Quasi resonant inverters (CSI)

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