Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)
• Low loss high density chip
• Low tail current
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (10 mm) and creepage distances (20 mm)

Typical Applications:
® B 6 – 121
• Switching (not for linear use)

Descargar Ficha Técnica